CdTe solar cell technology is one of the lowest-cost methods of generating electricity in the solar industry, benefiting from fast CdTe absorber deposition, CdCl₂ treatment and Cu doping. However, Cu doping has low photovoltage and issues with instability. Doping group V elements into CdTe is therefore a promising route to address these challenges. Although high-temperature in situ group V doped CdSeTe devices have demonstrated efficiencies exceeding 20%, they face obstacles including post-deposition doping activation processes, short carrier lifetimes and low activation ratios. Here, we demonstrate low-temperature and effective ex situ group V doping for CdSeTe solar cells using group V chlorides. For AsCl₃ doped CdSeTe solar cells, the dopant activation ratio can be 5.88%, hole densities reach >2 × 10¹⁵ cm⁻³ and carrier lifetime is longer than 20 ns. Thus, ex situ As doped CdSeTe solar cells show open-circuit voltages ~863 mV, compared to the highest open-circuit voltage of 852 mV for Cu doped CdSeTe solar cells.

CdTe 太阳能电池技术是太阳能行业中成本最低的发电方法之一，受益于快速 CdTe 吸收体沉积、CdCl ₂处理和 Cu 掺杂。然而，Cu掺杂具有低光电压和不稳定的问题。因此，将 V 族元素掺杂到 CdTe 中是解决这些挑战的有希望的途径。尽管高温原位 V 族掺杂 CdSeTe 器件的效率已超过 20%，但它们面临的障碍包括沉积后掺杂激活过程、载流子寿命短和激活率低。在这里，我们展示了使用 V 族氯化物对 CdSeTe 太阳能电池进行低温和有效的非原位 V 族掺杂。AsCl ₃掺杂CdSeTe太阳能电池，掺杂剂活化率可达5.88%，空穴密度达到>2×10 ¹⁵  cm ^{- 3}，载流子寿命大于20 ns。因此，异位 As 掺杂 CdSeTe 太阳能电池的开路电压约为 863 mV，而 Cu 掺杂 CdSeTe 太阳能电池的最高开路电压为 852 mV。