ABSTRACT

A vertical p-type 3D silicon nanotube field effect transistor (p-type Si-NTFET) is designed and simulated by using the tool Sentaurus Technology computer-aided design (TCAD). To improve the performance with reduced short channel effects, Si-NTFET device is created with inner and outer gate structures. The performance of the proposed device is analysed in terms of outer gate length. The vertical 3D p-type Si-NTFET gives an on state current (I_ON) of −2.084 × 10⁻³ A/µm, off state current of (I_OFF) of −2.457 × 10⁻¹²A/µm and subthreshold swing of the p-type Si-NTFET device is 53 mV/dec at V_DS of −0.3 V. The obtained I_ON/I_OFF ratio of the device is 10⁹. The capacitances (C_GD, C_GG) and the transconductance (g_m) and cutoff frequency (f_t) of the device are also analysed. The simulated p-type Si-NTFET device has proved that the device is suitable for low-power applications.

摘要

使用 Sentaurus Technology 计算机辅助设计 (TCAD) 工具设计和仿真了一种垂直 p 型 3D 硅纳米管场效应晶体管（p 型 Si-NTFET）。为了提高性能并减少短沟道效应，Si-NTFET 器件被创建为具有内栅极和外栅极结构。根据外栅极长度分析了所提出器件的性能。垂直 3D p 型 Si-NTFET 的导通电流 ( I _ON ) 为 -2.084 × 10 ^-3 A/µm，关断电流 ( I _OFF ) 为 -2.457 × 10 ^-12 A/µm 和亚阈值摆幅p 型 Si-NTFET 器件在-0.3 V 的V _{DS下为 53 mV/dec。获得的}I _ON / I_{该器件的关闭}比为 10 ⁹。还分析了器件的电容 ( C _GD , C _GG ) 和跨导 ( g _m ) 和截止频率 ( f _{t )。}模拟的 p 型 Si-NTFET 器件证明该器件适用于低功率应用。