The structure collapse and volume expansion of anode materials are the restrictive factors of SIBs industrialization. In this work, monolayer and interlayer-expanded few layers MoS₂ are uniformly confined in N-doped carbon matrix and further assembled into hollow hierarchical spheres (H-MoS₂@NC). The mono/few layer structured MoS₂ is helpful to decrease ion diffusion energy barrier for accelerating electrochemical reaction kinetics. The robust protection carbon layer between the interlayer of MoS₂ sheets can not only stabilize the layered structure of MoS₂ but also further increase the conductivity of composite, and the hierarchical, porous and hollow structure furnishes a fast electronic migration channels and restrains the volume change of MoS₂ during charge and discharge processes. In addition, MXene-Ti₃C₂T_x sheets are used as multifunctional binders instead of polymer binders to prepare flexible, binder-free electrode (MX-H-MoS₂@NC), in which electrons and ions travel faster without the hindrance of polymer binder. Moreover, the flexible MX-H-MoS₂@NC electrode can also alleviate the overall volume expansion of H-MoS₂@NC spheres. Consequently, the sodium storage property of MX-H-MoS₂@NC exhibit the better sodium storage performance than that of PVDF bonded H-MoS₂@NC and bare MoS₂. Further, the MX-H-WS₂@NC with same structure is also synthesized by our proposed method, indicating that this method has universal applicability to fabricate more MXene bonded hollow hierarchical spheres are made of mono layer structured transition metal chalcogenides (MX-H-LTMDs@NC).

负极材料的结构坍塌和体积膨胀是SIBs产业化的制约因素。在这项工作中，单层和层间扩展的几层 MoS ₂均匀地限制在 N 掺杂的碳基质中，并进一步组装成中空的分级球体 (H-MoS ₂ @NC)。单层/少层结构的MoS ₂有助于降低离子扩散能垒以加速电化学反应动力学。MoS ₂片层间的坚固保护碳层不仅可以稳定MoS ₂的层状结构但也进一步提高了复合材料的导电性，分层、多孔和中空的结构提供了快速的电子迁移通道，并抑制了充放电过程中 MoS ₂的体积变化。此外，MXene-Ti ₃ C ₂ T _x片材被用作多功能粘合剂而不是聚合物粘合剂来制备柔性、无粘合剂的电极（MX-H-MoS ₂ @NC），其中电子和离子的移动速度更快而不受阻碍聚合物粘合剂。此外，灵活的MX-H-MoS ₂ @NC 电极还可以缓解H-MoS ₂ @NC 球体的整体体积膨胀。因此，MX-H-MoS _{2 的}储钠性能@NC 表现出比 PVDF 键合的 H-MoS ₂ @NC 和裸 MoS ₂更好的钠存储性能。此外，我们提出的方法还合成了具有相同结构的 MX-H-WS ₂ @NC，表明该方法具有普遍适用性，可以制造更多由单层结构过渡金属硫属元素化物（MX-H -LTMDs@NC）。