Threshold switching (TS) devices have evolved as one of the most promising elements in memory circuit due to their important significance in suppressing crosstalk current in the crisscross array structure. However, the issue of high threshold voltage (V_th) and low stability still restricts their potential applications. Herein, the vanadium oxide (VO_x) films deposited by the pulsed laser deposition (PLD) method are adopted as the switching layer to construct the TS devices. The TS devices with Pt/VO_x/Pt/PI structure exhibit non-polar, electroforming-free, and volatile TS characteristics with an ultralow V_th (+0.48 V/−0.48 V). Besides that, the TS devices also demonstrates high stability, without obviously performance degradations after 350 cycles of endurance measurements. Additionally, the transition mechanism is mainly attributed to the synergistic effect of metal-insulator transition of VO₂ and oxygen vacancies. Furthermore, the nonvolatile bipolar resistance switching behaviors can be obtained by changing oxygen pressure during the deposition process for switching films. This work demonstrates that vanadium oxide film is a good candidate as switching layer for applications in the TS devices and opens an avenue for future electronics.

阈值开关 (TS) 器件由于其在抑制交叉阵列结构中的串扰电流方面具有重要意义，已发展成为存储器电路中最有前途的元件之一。然而，高阈值电压（V _th）和低稳定性的问题仍然限制了它们的潜在应用。在此，采用脉冲激光沉积（PLD）方法沉积的氧化钒（VO _x）薄膜作为开关层来构建TS器件。具有 Pt/VO _x /Pt/PI 结构的 TS 器件表现出无极性、无电铸和易挥发的 TS 特性，具有超低的 V _th(+0.48 V/-0.48 V)。除此之外，TS 设备还表现出高稳定性，在 350 次耐久性测量循环后没有明显的性能下降。此外，转变机制主要归因于VO ₂和氧空位的金属-绝缘体转变的协同作用。此外，通过在开关薄膜的沉积过程中改变氧气压力，可以获得非易失性双极电阻开关行为。这项工作表明，氧化钒薄膜是 TS 器件中应用的开关层的良好候选，并为未来的电子产品开辟了道路。