In this study, high temperature oxidation behavior of molybdenum borides by pack cementation process was investigated. Silicon (Si) pack cementation process of molybdenum borides was performed at 1100 °C for 5 h. Silicide layers including MoSi₂ phase were formed on the surface of molybdenum borides by Si pack cementation process. The thickness of silicide layer was about 70.12 μm. Molybdenum borides and pack cemented Molybdenum borides was oxidized at 1000 °C for up to 50 h. Molybdenum borides without pack cementation process was severely oxidized and its weight was reduced by approximately 87% compared to the initial weight due to the evaporation of MoO₃ phase. On the other hand, pack cemented molybdenum borides were much less oxidized. In pack cemented molybdenum borides, dense borosilicate layer was formed at the surface, and this layer effectively suppressed continuous oxidation and evaporation of MoO₃ phase. Based on these results, we demonstrated that the cause of this difference depends on the coating layer formed on the surface by pack cementation process, and Si pack cementation process is effective in improving the oxidation resistance of molybdenum borides.

在这项研究中，研究了填充胶结工艺对硼化钼的高温氧化行为。硼化钼的硅 (Si) 填充胶结工艺在 1100 °C 下进行 5 小时。通过Si填充胶结工艺在钼硼化物表面形成包括MoSi ₂相的硅化物层。硅化物层的厚度约为70.12μm。钼硼化物和填充胶结钼硼化物在 1000 °C 下氧化长达 50 小时。没有填充胶结工艺的硼化钼被严重氧化，由于 MoO ₃的蒸发，其重量与初始重量相比减少了约 87%阶段。另一方面，填充胶结钼硼化物的氧化程度要低得多。在填充胶结钼硼化物中，表面形成致密的硼硅酸盐层，该层有效地抑制了MoO ₃相的连续氧化和蒸发。基于这些结果，我们证明了这种差异的原因取决于通过填充渗碳工艺在表面形成的涂层，而硅填充渗碳工艺对于提高钼硼化物的抗氧化性是有效的。