In this work, bulk Se₈₅Te_15-xBi_x chalcogenide glasses were synthesized by melt quenching technique. The nano-thin chalcogenide films of Se₈₅Te_15-xBi_x alloys with thickness 40 nm were deposited on glass/Si wafer by Physical Vapour Condensation Technique (PVCT). Their optical and structural properties were analysed by the exposure of different gamma irradiation doses. High resolution X-ray diffraction (HRXRD) and field emission scanning electron microscopy (FESEM) were used to demonstrate the crystalline and morphological properties. The phase transformation studies of nano-thin films were carried out before and after irradiation by 3, 6, and 9 kGy doses of gamma (γ) rays. The optical parameters such as absorption coefficient, Urbach tail and extinction coefficient were found to be varied with the gamma irradiation doses. Importantly, the indirect allowed band gap increased as increasing the gamma irradiation doses. These notable shifts in the optical band gap and absorption coefficient values can be explained by the increment in disorderness and lattice strain due to gamma irradiation.

在这项工作中，通过熔融淬火技术合成了块状 Se ₈₅ Te _15-x Bi _x硫属化物玻璃。厚度为 40 nm的 Se ₈₅ Te _15-x Bi _x合金的纳米硫族化物薄膜通过物理气相冷凝技术 (PVCT) 沉积在玻璃/硅晶片上。通过不同伽马辐射剂量的暴露来分析它们的光学和结构特性。高分辨率 X 射线衍射 (HRXRD) 和场发射扫描电子显微镜 (FESEM) 用于证明晶体和形态特性。纳米薄膜的相变研究分别在 3、6 和 9 kGy 剂量的 γ ( γ) 射线。发现吸收系数、Urbach 尾和消光系数等光学参数随伽马辐射剂量而变化。重要的是，间接允许带隙随着伽马辐射剂量的增加而增加。这些光学带隙和吸收系数值的显着变化可以用伽马辐射引起的无序度和晶格应变的增加来解释。