CdSe_xTe_(1-x) (CST) ternary thin films were fabricated by stacking thermally evaporated CdSe and electron beam evaporated CdTe layers. The final structure was achieved in a stoichiometric form of approximately Cd:Se:Te = 50:25:25. The post-annealing processes at 300, 400, and 450 °C were applied to trigger the compound formation of CST thin films. The X-ray diffraction (XRD) profiles revealed that CdTe and CdSe have major peaks at 23.9° and 25.5° corresponds to (111) direction in cubic zinc-blend structure. Raman modes of CdTe were observed at 140 and 168 cm⁻¹, while Raman modes of CdSe films were detected at 208 and 417 cm⁻¹. The post-annealing process was found to be an effective method in order to combine both diffraction peaks and the vibrational modes of CdTe and CdSe, consequently to form CST ternary alloy. Transmission spectroscopy analysis revealed that CST films have direct band gap value of 1.6 eV.

CdSe _x Te _(1-x) (CST) 三元薄膜是通过堆叠热蒸发的 CdSe 和电子束蒸发的 CdTe 层来制造的。最终结构以大约 Cd:Se:Te = 50:25:25 的化学计量形式实现。应用 300、400 和 450 °C 的后退火工艺来触发 CST 薄膜的复合形成。X 射线衍射 (XRD) 谱显示 CdTe 和 CdSe 在 23.9° 和 25.5° 处有主要峰，对应于立方锌混合物结构中的 (111) 方向。在 140 和 168 cm ^-1处观察到 CdTe 的拉曼模式，而在 208 和 417 cm ^-1处检测到 CdSe 薄膜的拉曼模式. 后退火工艺被发现是一种有效的方法，可以结合 CdTe 和 CdSe 的衍射峰和振动模式，从而形成 CST 三元合金。透射光谱分析表明，CST 薄膜的直接带隙值为 1.6 eV。