Annealing treatments are an effective strategy to modulate trap depth and trap concentration in electronic materials. Herein, we have found that annealing in a weak reducing atmosphere is a good way to tailor the trap depth and trap concentration of the (LuYGd)(Al₄Ga)O₁₂:Ce³⁺,V³⁺ multicomponent phosphor. The characterization results show that the annealing atmosphere has no effect on the crystal structure and the photoluminescence peak position, but strengthens the trap depth and trap concentration. Especially, after annealing in a weak reducing atmosphere, the thermoluminescence (TL) integrated area of the phosphor is 7.46 times that of the unannealed phosphor, and the TL peaks obviously shift to a higher temperature region, which could be promoted to enhance optical information storage properties. Moreover, the peak position of photo-stimulated luminescence (PSL) is consistent with that of photoluminescence (PL), indicating that (LuYGd)(Al₄Ga)O₁₂:Ce³⁺,V³⁺ phosphor annealed in a weak reducing atmosphere possesses optical information read-in and read-out characteristics, and suggests that the multicomponent phosphor is a good candidate for optical information storage materials.

中文翻译：

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多组分石榴石磷光体 (LuYGd) (Al ₄ Ga) O ₁₂ : Ce ³⁺ , V ³⁺ : 通过还原气体退火的陷阱调制和光学信息存储特性

退火处理是调节电子材料中陷阱深度和陷阱浓度的有效策略。在，我们发现在弱还原气氛中退火是调整 (LuYGd) (Al ₄ Ga) O ₁₂ : Ce ³⁺ , V ³⁺的陷阱深度和陷阱浓度的好方法多组分磷光体。表征结果表明，退火气氛对晶体结构和光致发光峰位置没有影响，但增强了陷阱深度和陷阱浓度。特别是在弱还原气氛中退火后，荧光粉的热释光(TL)积分面积是未退火荧光粉的7.46倍，TL峰明显移向较高温度区域，可以促进提高光学性能。信息存储属性。此外，光致发光 (PSL) 的峰值位置与光致发光 (PL) 的峰值位置一致，表明 (LuYGd) (Al ₄ Ga) O ₁₂ : Ce ³⁺ , V ³⁺ 在弱还原气氛中退火的磷光体具有光信息读入和读出特性，表明多组分磷光体是光信息存储材料的良好候选材料。