We report on the first demonstration of metalorganic vapor phase epitaxy-regrown (MOVPE) ohmic contacts in an all MOVPE-grown β-Ga₂O₃ metal semiconductor field effect transistor (MESFET). The low-temperature (600 C) heavy (n⁺) Si-doped regrown layers exhibit extremely high conductivity with a sheet resistance of 73 Ω/□ and a record low metal/n⁺-Ga₂O₃ contact resistance of 80 mΩmm and specific contact resistivity of 8.3נ10⁻⁷ Ωcm² were achieved. The fabricated MESFETs exhibit a maximum ON current of 130mAmm⁻¹ and a high I _ON/I _OFF ratio of >10¹⁰. Thermal characterization was also performed to assess the device self-heating under the high current and power conditions.

我们报告了在全 MOVPE 生长的β -Ga ₂ O ₃金属半导体场效应晶体管 (MESFET)中金属有机气相外延再生长 (MOVPE) 欧姆接触的首次演示。低温 (600 C) 重 (n ⁺ ) Si 掺杂再生长层表现出极高的导电性，具有 73 Ω/□ 的薄层电阻和80 mΩmm的创纪录的低金属/n ⁺ -Ga ₂ O ₃接触电阻和实现了 8.3נ10 ^-7 Ωcm ^{2 的}特定接触电阻率。制造的 MESFET 的最大导通电流为 130mAmm ^-1和高I _ON / I _关断比 >10 ¹⁰。还进行了热表征以评估器件在高电流和功率条件下的自热。