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130mAmm−1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts
Applied Physics Express ( IF 2.3 ) Pub Date : 2021-06-22 , DOI: 10.35848/1882-0786/ac07ef
Arkka Bhattacharyya 1 , Saurav Roy 1 , Praneeth Ranga 1 , Daniel Shoemaker 2 , Yiwen Song 2 , James Spencer Lundh 2 , Sukwon Choi 2 , Sriram Krishnamoorthy 1
Affiliation  

We report on the first demonstration of metalorganic vapor phase epitaxy-regrown (MOVPE) ohmic contacts in an all MOVPE-grown β-Ga2O3 metal semiconductor field effect transistor (MESFET). The low-temperature (600 C) heavy (n+) Si-doped regrown layers exhibit extremely high conductivity with a sheet resistance of 73 Ω/□ and a record low metal/n+-Ga2O3 contact resistance of 80 mΩmm and specific contact resistivity of 8.3נ10−7 Ωcm2 were achieved. The fabricated MESFETs exhibit a maximum ON current of 130mAmm−1 and a high I ON/I OFF ratio of >1010. Thermal characterization was also performed to assess the device self-heating under the high current and power conditions.



中文翻译:

具有低温金属有机气相外延再生长欧姆接触的 130mAmm−1 β-Ga2O3 金属半导体场效应晶体管

我们报告了在全 MOVPE 生长的β -Ga 2 O 3金属半导体场效应晶体管 (MESFET)中金属有机气相外延再生长 (MOVPE) 欧姆接触的首次演示。低温 (600 C) 重 (n + ) Si 掺杂再生长层表现出极高的导电性,具有 73 Ω/□ 的薄层电阻和80 mΩmm的创纪录的低金属/n + -Ga 2 O 3接触电阻和实现了 8.3נ10 -7 Ωcm 2 的特定接触电阻率。制造的 MESFET 的最大导通电流为 130mAmm -1和高I ON / I 关断比 >10 10。还进行了热表征以评估器件在高电流和功率条件下的自热。

更新日期:2021-06-22
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