Moiré superlattices formed in two-dimensional semiconductor heterobilayers provide a new realization of Hubbard model physics in which the number of electrons per effective atom can be tuned at will. We report on an exact diagonalization study of the electronic properties of half-filled narrow moiré bands in which correlation strengths are varied by changing twist angles or interaction strengths. We construct a phase diagram for the bilayer, identifying where the metal-insulator phase transition occurs, estimating the sizes of the charge gaps in the insulating phase, and commenting on the nature of the transition and the importance of subdominant interaction parameters.

中文翻译：

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过渡金属二硫属化物异质双层莫尔超晶格中的金属-绝缘体转变

在二维半导体异质双层中形成的莫尔超晶格提供了哈伯德模型物理学的新实现，其中每个有效原子的电子数可以随意调整。我们报告了半填充窄莫尔条纹的电子特性的精确对角化研究，其中相关强度通过改变扭曲角或相互作用强度而变化。我们为双层构建了一个相图，确定金属-绝缘体相变发生的位置，估计绝缘相中电荷间隙的大小，并评论转变的性质和次主导相互作用参数的重要性。