The choice of materials appropriate for the fabrication of waveguides and other components is the most important problem in the development of THz plasmonics. We consider the suitability of the use of In\(_{2-x}\)Cr\(_{x}\)O\(_{3}\) magnetic semiconductor as a constitutive material for producing nanowires supporting propagation of the transverse magnetic (TM) and transverse electric (TE) modes of surface plasmons. We utilize the feature of this material to behave as a homogeneous low-loss negative refractive index medium existing due to the coexistence of the magnon and plasmon oscillations. The cut-off conditions of the fundamental TM\(_0\) and TE\(_0\) modes of the waveguide are defined. It is demonstrated that the TE\(_0\) mode of surface plasmons has low-frequency and high-frequency cut-offs and can be propagated over a large distance (up to several hundred micrometers) with acceptable mode confinement.

选择适合制造波导和其他组件的材料是太赫兹等离子体开发中最重要的问题。我们考虑使用 In \(_{2-x}\) Cr \(_{x}\) O \(_{3}\)磁性半导体作为生产支持纳米线传播的本构材料的适用性表面等离子体的横向磁 (TM) 和横向电 (TE) 模式。我们利用这种材料的特性表现为由于磁振子和等离子体振荡的共存而存在的均匀低损耗负折射率介质。基本 TM \(_0\)和 TE \(_0\)的截止条件定义了波导的模式。结果表明，表面等离子体激元的 TE \(_0\)模式具有低频和高频截止频率，并且可以在可接受的模式限制下传播很远的距离（高达数百微米）。