Strong electron–electron interactions between adjacent nanoscale wires can lead to one-dimensional Coulomb drag, where current in one wire induces a voltage in the second wire via Coulomb interactions. This effect creates challenges for the development of nanoelectronic devices. Quantum spin Hall (QSH) insulators are a promising platform for the development of low-power electronic devices due to their topological protection of edge states from non-magnetic disorder. However, although Coulomb drag in QSH edges has been considered theoretically, experimental explorations of the effect remain limited. Here, we show that one-dimensional Coulomb drag can be observed between adjacent QSH edges that are separated by an air gap. The pair of one-dimensional helical edge states is created in split H-bar devices in inverted InAs/GaSb quantum wells. Near the Dirac point, negative drag signals dominate at low temperatures and exhibit a non-monotonic temperature dependence, suggesting that distinct drag mechanisms compete and cancel out at higher temperatures. The results suggest that QSH effects could be used to suppress the impact of Coulomb interactions on the performance of future nanocircuits.

相邻纳米级导线之间的强电子-电子相互作用会导致一维库仑阻力，其中一根导线中的电流通过库仑相互作用在第二根导线中感应出电压。这种效应给纳米电子器件的发展带来了挑战。量子自旋霍尔 (QSH) 绝缘体是开发低功率电子器件的有前途的平台，因为它们对边缘态的拓扑保护免受非磁性无序的影响。然而，尽管理论上已经考虑了 QSH 边缘的库仑阻力，但对该效应的实验探索仍然有限。在这里，我们展示了在由气隙隔开的相邻 QSH 边缘之间可以观察到一维库仑阻力。这对一维螺旋边缘状态是在倒置的 InAs/GaSb 量子阱中的分裂 H-bar 器件中创建的。在狄拉克点附近，负阻力信号在低温下占主导地位并表现出非单调的温度依赖性，这表明不同的阻力机制在较高温度下竞争和抵消。结果表明，QSH 效应可用于抑制库仑相互作用对未来纳米电路性能的影响。