In this paper, ZnSe films were prepared on quartz substrates by selenizing as-sputtered zinc films at different temperatures for 6 h. The crystal structure, morphology, microscopic defects and optical properties of the ZnSe films were characterized by XRD, SEM, Raman spectroscopy, UV–visible spectrophotometer and slow positron beam Doppler broadening spectroscopy, respectively. The results showed that ZnSe thin films had the best structural and optical properties when the selenization temperature was 700 °C . All ZnSe thin films have a hexagonal wurtzite structure. The results of XRD、SEM and Raman spectra all showed that the crystallization and molar ratio of the films were significantly optimized with the increase of temperature. The transmission spectra of the films showed an obvious absorption edge of ZnSe and increased transmittance with the increase of temperature. The variation of defect concentration and types in the ZnSe thin films were released visually by slow positron beam Doppler broadening energy spectra.

在本文中，通过在不同温度下对溅射的锌膜进行硒化 6 小时，在石英衬底上制备了 ZnSe 膜。ZnSe 薄膜的晶体结构、形貌、微观缺陷和光学性能分别通过 XRD、SEM、拉曼光谱、紫外-可见分光光度计和慢正电子束多普勒展宽光谱表征。结果表明，硒化温度为700℃时，ZnSe薄膜具有最佳的结构和光学性能。所有的 ZnSe 薄膜都具有六方纤锌矿结构。XRD、SEM和Raman光谱结果均表明，随着温度的升高，薄膜的结晶度和摩尔比显着优化。薄膜的透射光谱显示出明显的 ZnSe 吸收边，并且随着温度的升高透射率增加。ZnSe 薄膜中缺陷浓度和类型的变化通过慢正电子束多普勒展宽能谱在视觉上得到释放。