X-Ray diffraction (XRD), Raman scattering, Cathodoluminescence measurements (CL) and Photoluminescence (PL) were employed to characterize the structure and optical properties of Dysprosium (Dy) and Europium (Eu) implanted GaN films grown by MOCVD. For GaN: Dy³⁺ samples, Dy³⁺ implantation leads to strain and radiation damage increasing with Dy³⁺ implanted fluence. From the CL spectra, the characteristic transitions from the excited ⁴F_9/2 level of Dy³⁺ to ⁶H_15/2 (485 nm), ⁶H_13/2 (583 nm) and ⁶H_11/2 (671 nm) were observed. For Dy³⁺ and Eu³⁺ co-doped GaN, considering the doping effects of Dy³⁺, we proposed that there might exist a resonance energy transfer process from Eu³⁺ ions ⁷F₀→⁵D₂ to Dy³⁺ ions ⁴F_9/2 → ⁶H_15/2, which is dominated by the electric dipole-dipole interaction.

X 射线衍射 (XRD)、拉曼散射、阴极发光测量 (CL) 和光致发光 (PL) 被用来表征通过 MOCVD 生长的镝 (Dy) 和铕 (Eu) 注入 GaN 薄膜的结构和光学特性。对于GaN：Dy ³⁺样品，Dy ³⁺注入导致应变和辐射损伤随着Dy ³⁺注入注量的增加而增加。从 CL 光谱，特征跃迁从Dy ³⁺的激发⁴ F _9/2能级到⁶ H _15/2 (485 nm)、⁶ H _13/2 (583 nm) 和⁶ H _11/2 (671 nm) ) 被观察到。对于 Dy³⁺和 Eu ³⁺共掺杂的 GaN，考虑到 Dy ³⁺的掺杂效应，我们提出可能存在 Eu ³⁺离子⁷ F ₀ → ⁵ D ₂到 Dy ³⁺离子⁴ F的共振能量转移过程_9/2  →  ⁶ H _15/2，主要是电偶极-偶极相互作用。