In this paper, we discuss the optimal DC magnetron sputtering deposition conditions needed to obtain low resistivity Molybdenum (Mo) thin films for high-temperature (800 °C) microheater applications. The influence of Ar gas pressure (2–10 mTorr), sputtering power (80–160 W), and annealing temperature (200–1000 °C) on the resistivity and adhesive properties of Mo thin films were investigated. The structural, morphological, and electrical properties of as-deposited and annealed Mo thin films were characterized by X-ray diffraction, Scanning Electron Microscopy, Atomic Force Microscopy, and four-point probe techniques. The thin films deposited at 120 W, 6 mTorr, and annealed at 1000 °C showed low resistivity (18 μΩ-cm) and good adhesive properties. Suspended-membrane microheaters were fabricated using as-deposited and annealed Mo thin films, and their performance characteristics were compared. The impact of thin-film resistivity on power consumption and on the maximum operating temperature of Mo microheater was also investigated.

在本文中，我们讨论了获得用于高温 (800 °C) 微加热器应用的低电阻率钼 (Mo) 薄膜所需的最佳直流磁控溅射沉积条件。研究了 Ar 气压 (2-10 mTorr)、溅射功率 (80-160 W) 和退火温度 (200-1000 °C) 对 Mo 薄膜电阻率和粘附性能的影响。通过 X 射线衍射、扫描电子显微镜、原子力显微镜和四点探针技术表征沉积和退火的 Mo 薄膜的结构、形态和电学特性。在 120 W、6 mTorr 下沉积并在 1000 °C 下退火的薄膜显示出低电阻率 (18 μΩ-cm) 和良好的粘合性能。使用沉积和退火的 Mo 薄膜制造悬浮膜微型加热器，并对它们的性能特点进行了比较。还研究了薄膜电阻率对功耗和钼微加热器最高工作温度的影响。