The effect of neutron irradiation is investigated in respect of five different Gd dopant concentrations of silica (SiO₂) glass; 1–10 mol% via sol-gel route fabrication. Using Raman spectroscopy and X-ray diffraction (XRD), characterization was made of the defects that give rise to the luminescence signal. The approach allows the Si–O–Si coordination to be identified and studied. The fabrication process as well as irradiation have been found to produce defects which influence the luminescence response of the material. The Raman spectra from Gd-doped SiO₂ glass neutron irradiated to doses from 2 to 10 Gy show five prominent peaks (at 300, 430, 680, 820, 1050 cm⁻¹) with the presence of Gd-O-Gd seen at 300 cm⁻¹. The Miller index (211) crystal plane observed from XRD allowed calculation of the atomic spacing, lattice constant and degree of structural order of the irradiated samples. The results show that from fabrication of silica of different Gd dopant concentration and the effect of neutron irradiation these lead to a number of desirable characteristics for use of the medium as a dosimetric system for neutron radiation physics applications.

研究了中子辐照对五种不同Gd掺杂浓度的二氧化硅（SiO ₂）玻璃的影响；通过溶胶-凝胶途径制造 1–10 mol%。使用拉曼光谱和 X 射线衍射 (XRD)，对产生发光信号的缺陷进行表征。该方法允许识别和研究 Si-O-Si 配位。已经发现制造过程以及辐射会产生影响材料发光响应的缺陷。掺杂 Gd 的 SiO ₂玻璃中子的拉曼光谱在2 到 10 Gy 的剂量下照射，显示出五个突出的峰（在 300、430、680、820、1050 cm ^{-1 处}），在 300 处可见 Gd-O-Gd 的存在厘米^-1. 从 XRD 观察到的米勒指数 (211) 晶面允许计算受辐射样品的原子间距、晶格常数和结构有序度。结果表明，通过制造不同 Gd 掺杂剂浓度的二氧化硅和中子辐射的影响，这些导致将介质用作中子辐射物理应用的剂量测定系统的许多理想特性。