Light- and elevated temperature-induced degradation (LeTID) is assumed to be triggered by the hydrogen content in the crystalline silicon bulk. This article investigates differently thick atomic layer-deposited aluminum oxide (AlO _x ) layers acting as diffusion barrier for hydrogen originating from a hydrogen-rich silicon nitride (SiN _y :H) layer. We demonstrate that the extent of LeTID can be significantly reduced by adjusting the AlO _x layer thickness up to 25 nm. To directly measure the diffusing species, a deuterium-rich SiN _y :D layer is deposited and the deuterium content is measured in an amorphous Si layer at the back side of the wafer via secondary ion mass spectrometry. Thus, a diffusion length of deuterium in the AlO _x layer of $({3.8 \pm 1.6}){\boldsymbol{\ }}\;{\text{nm}}$ is determined at a firing temperature of $({743 \pm 2})^\circ {\rm{C}}$ . These results are not only a contribution to determine the LeTID formation dynamics, but also can be used to control LeTID in silicon wafers and solar cells.

中文翻译：

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氧化铝的作用_X 氧化铝的厚度_X/罪_是: 关于光和高温诱导的 c-Si 中的降解和氢扩散的 H 层堆叠

光和高温诱导的退化 (LeTID) 被认为是由晶体硅块中的氢含量触发的。本文研究了不同厚度的原子层沉积氧化铝 (AlO _x ) 层作为源自富氢氮化硅 (SiN) 的氢的扩散阻挡层。 _是 :H) 层。我们证明了通过调整 Al2O 可以显着降低 LeTID 的范围 _X层厚可达 25 nm。为了直接测量扩散物质，富含氘的 SiN _是 沉积:D 层，并通过二次离子质谱法测量晶片背面的非晶硅层中的氘含量。因此，氘在 Al2O3 中的扩散长度 _X 一层 $({3.8 \pm 1.6}){\boldsymbol{\ }}\;{\text{nm}}$ 是在烧成温度为 $({743 \pm 2})^\circ {\rm{C}}$ . 这些结果不仅有助于确定 LeTID 形成动力学，还可以用于控制硅片和太阳能电池中的 LeTID。