The heterogeneous integration of a GaSb subcell into a 4-terminal cell is currently experiencing a regain of interest for high concentrator multijunction photovoltaics. In this context, the assessment of the lateral charge carrier transport in a GaSb cell under concentrated light is fundamental. The characterization and modeling of a GaSb single-junction solar cell under concentration are presented here. The originality of this article resides in the fine analysis of experimental data using an in-house pseudo-3-D model where the intrinsic diode is modeled with a temperature-dependent 1-D physical model. The limiting factors responsible for the performance drop under concentrated light are discussed. It is also demonstrated that an efficiency of 12.5% can be reached under 64 suns with realistic technological improvements.

中文翻译：

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使用伪 3D 模型对 MBE 生长的聚光 PN GaSb 太阳能电池进行建模和表征


GaSb 子电池异质集成到四端电池中目前正重新引起高聚光多结光伏发电的兴趣。在这种情况下，评估 GaSb 电池在集中光下的横向电荷载流子传输至关重要。本文介绍了聚光下 GaSb 单结太阳能电池的表征和建模。本文的原创性在于使用内部伪 3-D 模型对实验数据进行精细分析，其中本征二极管使用温度相关的 1-D 物理模型进行建模。讨论了在集中光下导致性能下降的限制因素。还证明，通过现实的技术改进，在 64 个太阳光下，效率可以达到 12.5%。