A method for quantifying dopant-hydrogen pairs and their formation dynamics in crystalline silicon by means of directly contacted resistance measurements is presented and exemplarily validated. The method can also be applied in-situ in the temperature range where dopant-hydrogen pair formation occurs. Furthermore, the influence of different confounding factors such as a faulty assumption of doping level, unnoticed temperature variations, and unwanted illumination is quantified. It is concluded that the detection limit of dopant-hydrogen pairs of the presented method is most likely limited by unnoticed temperature fluctuations and scales with the actual dopant concentration. For crystalline silicon doped with 1016 cm-3 as it is usually used for photovoltaic applications, the detection limit is found to be below 1013 cm-3.

中文翻译：

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用于定量晶体硅中硼-氢对的直接电阻测量方法和误差分析


提出了一种通过直接接触电阻测量来量化晶体硅中的掺杂剂-氢对及其形成动力学的方法，并进行了示例性验证。该方法还可以在发生掺杂剂-氢对形成的温度范围内原位应用。此外，还量化了不同混杂因素的影响，例如掺杂水平的错误假设、未注意到的温度变化和不需要的照明。结论是，该方法的掺杂剂-氢对的检测限很可能受到未注意到的温度波动和实际掺杂剂浓度比例的限制。对于通常用于光伏应用的掺杂 1016 cm-3 的晶体硅，检测限低于 1013 cm-3。