Improving the Electrical and Low-Frequency Noise Performance of Ionic-Liquid-Gated ReS2 Field-Effect Transistor with Hexagonal Boron Nitride,Physica Status Solidi-Rapid Research Letters

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Improving the Electrical and Low-Frequency Noise Performance of Ionic-Liquid-Gated ReS2 Field-Effect Transistor with Hexagonal Boron Nitride
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2021-06-22 , DOI: 10.1002/pssr.202100276
Wugang Liao ₁ , Long Huang ₂

Affiliation

The impact of the interfacial hexagonal boron nitride (h-BN) layer between the channel and ionic liquid (IL) on an IL-gated 2D rhenium disulfide (ReS₂) field-effect transistor (FET) is investigated. Through electrical DC and low-frequency noise (LFN) characterization, it is found that the interfacial h-BN layer enhances mobility and reduces the noise level of the device due to suppressed traps and improved channel interface. These experimental findings suggest that the use of interfacial h-BN layer in 2D FETs is a promising method for enhancing the device performance.

中文翻译：

六方氮化硼改善离子液体门控 ReS2 场效应晶体管的电气和低频噪声性能

研究了通道和离子液体 (IL) 之间的界面六方氮化硼 (h-BN) 层对 IL 门控二维二硫化铼 (ReS ₂ ) 场效应晶体管 (FET) 的影响。通过电 DC 和低频噪声 (LFN) 表征，发现界面 h-BN 层由于抑制陷阱和改进的通道界面而增强了迁移率并降低了器件的噪声水平。这些实验结果表明，在二维 FET 中使用界面 h-BN 层是提高器件性能的一种很有前途的方法。

更新日期：2021-06-22

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