The effect of non-magnetic Ga³⁺ ions doping at HoCrO₃ (HoCr_1-xGa_xO₃, 0 ≤ x ≤ 0.5) on the crystal structure, electronic structure, Raman spectra, and magnetic behaviours were systematically investigated. Most strikingly, a new spin-reorientation transition (Γ₂ → Γ₄ →Γ₂) is triggered by Ga³⁺ doping in HoCrO₃, and the spin configuration of Γ₄ is obviously displayed in ZFC and FC curves when x > 0.2. According to the XRD analysis, Ga³⁺ doping reduces the octahedral distortion and changes the lattice parameters, CrO and HoO bond lengths, and a turning point occurs at x = 0.2. Raman spectra further give evidence of the structural changes and suggest that spin-phonon coupling can be mediated by Ga³⁺ doping, illustrating the weakened effect of Ga³⁺ doping on the Ho and Cr interaction. The dilution of the competition between CrCr canted antiferromagnetic coupling and Ho-Cr antisymmetric coupling results in the appearance of spin configuration Γ₄. Moreover, the Griffiths phase can also be observed and gradually suppressed with doping. These complex magnetic transitions in HoCr_1-xGa_xO₃ are given in a magnetic phase diagram. From the application point of view, Ga³⁺ doping also improves the magneto-caloric effect (MCE) and refrigerant capacity (-ΔS_M = 10.74 J/KgK, and the RC is 416 J/K at 7 T and 10 K for HoCr_0.6Ga_0.4O₃), which sheds some light on how to optimize the MCE properties.

系统地研究了在 HoCrO ₃ (HoCr _{1- x} Ga _x O ₃ , 0 ≤  x  ≤ 0.5) 中掺杂非磁性 Ga ³⁺离子对晶体结构、电子结构、拉曼光谱和磁性行为的影响。最引人注目的是，HoCrO _{3 中}的Ga ³⁺掺杂触发了新的自旋-重定向跃迁（Γ ₂ → Γ ₄ → Γ ₂），当x  > 0.2时，Γ ₄的自旋构型明显显示在ZFC 和FC 曲线中。根据 XRD 分析，Ga³⁺掺杂降低了八面体畸变并改变了晶格参数、Cr O 和 Ho O 键长，并且在x  = 0.2处出现了转折点。拉曼光谱提供了结构变化的证据，并表明自旋声子耦合可以通过 Ga ³⁺掺杂介导，进一步说明 Ga ³⁺掺杂对 Ho 和 Cr 相互作用的减弱影响。Cr Cr 倾斜反铁磁耦合和Ho-Cr 反对称耦合之间竞争的稀释导致自旋构型Γ _{4 的出现}。此外，还可以观察到格里菲斯相，并通过掺杂逐渐抑制。HoCr 中这些复杂的磁跃迁_{1- x} Ga _x O ₃在磁相图中给出。从应用的角度来看，Ga ³⁺掺杂还提高了磁热效应（MCE）和制冷剂容量（-Δ S _M = 10.74 J / KgK，在 7 T 和 10 K 下，RC 为 416 J / K，对于HoCr _0.6 Ga _0.4 O ₃ )，这为如何优化 MCE 性能提供了一些启示。