Vanadium dioxide can exist in several polymorphs and among these the layered polymorph VO₂ (B) with monoclinic symmetry has numerous applications. In this work, VO₂ (B) phase thin film was prepared on quartz substrate via sputtering technique and its temperature dependent structural, electrical, and electronic properties were investigated. We have witnessed a broader structural phase transition around 220 K; which encounter significant changes in the lattice constants yet the monoclinic symmetry is retained over a temperature range from 100 K to 380 K. Temperature dependent resistance measurement also exhibited a semi-metal to insulator like transition near 220K displaying over 2 order of magnitude change in resistance across the transition. Small changes in the oxygen K-edge x-ray absorption spectrum were seen with change in temperature. At low temperature, an additional peak (d_|| band) has emerged in the XAS spectra at energy higher than the σ* peak. The appearance of d_|| band density of states is associated with the enhanced electron correlation effects driven by the localization of V–V pair's interactions at low temperature.

二氧化钒可以以多种多晶型物存在，其中具有单斜对称性的层状多晶型物 VO ₂ (B) 具有多种应用。在这项工作中，通过溅射技术在石英衬底上制备了VO ₂ (B) 相薄膜，并研究了其随温度变化的结构、电气和电子特性。我们目睹了 220 K 附近更广泛的结构相变；其晶格常数发生显着变化，但在 100 K 至 380 K 的温度范围内仍保持单斜对称性。 温度相关电阻测量还表现出半金属到绝缘体的转变，如接近 220K 显示超过 2 个数量级的电阻变化跨越过渡。氧K 的微小变化-edge X 射线吸收光谱随温度的变化而变化。在低温下，能量高于σ*峰的 XAS 光谱中出现了一个额外的峰（d _||带）。d _||的出现 能带态密度与低温下 V-V 对相互作用的局域化所驱动的增强的电子相关效应有关。