We show that the quantum interference between two spontaneous emission channels can be significantly enhanced when a three-level V-type atom is placed near the surface of the topological insulator Bi2Se3. The enhancement of quantum interference is a result of the strong dependence of the spontaneous emission rate on the orientation of an atomic dipole relative to surface of the Bi2Se3 at the frequencies of polaritonic-type excitations.

中文翻译：

---

Bi2Se3表面附近自发发射通道的量子干涉

我们表明，当将三能级 V 型原子放置在拓扑绝缘体表面附近时，可以显着增强两个自发发射通道之间的量子干涉。双2硒3. 量子干涉的增强是自发发射率强烈依赖于原子偶极子相对于表面的方向的结果双2硒3在极化子型激发的频率。