Antimony selenide (Sb${}_2$Se${}_3$) possesses great potential in the field of photovoltaics (PV) due to its suitable properties for use as a solar absorber and good prospects for scalability. Previous studies have reported the growth of a native antimony oxide (Sb${}_2$O${}_3$) layer at the surface of Sb${}_2$Se${}_3$ thin films during deposition and exposure to air, which can affect the contact between Sb${}_2$Se${}_3$ and subsequent layers. In this study, photoemission techniques were utilized on both Sb${}_2$Se${}_3$ bulk crystals and thin films to investigate the band alignment between Sb${}_2$Se${}_3$ and the Sb${}_2$O${}_3$ layer. By subtracting the valence band spectrum of an in situ cleaved Sb${}_2$Se${}_3$ bulk crystal from that of the atmospherically contaminated bulk crystal, a valence band offset (VBO) of $-1.72$ eV is measured between Sb${}_2$Se${}_3$ and Sb${}_2$O${}_3$. This result is supported by a $-1.90$ eV VBO measured between Sb${}_2$O${}_3$ and Sb${}_2$Se${}_3$ thin films via the Kraut method. Both results indicate a straddling alignment that would oppose carrier extraction through the back contact of superstrate PV devices. This work yields greater insight into the band alignment of Sb${}_2$O${}_3$ at the surface of Sb${}_2$Se${}_3$ films, which is crucial for improving the performance of these PV devices.

中文翻译：

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Sb2O3和Sb2Se3的能带对齐

硒化锑（Sb${}_2$硒${}_3$）由于其适合用作太阳能吸收器的特性和可扩展性的良好前景，在光伏（PV）领域具有巨大潜力。先前的研究报告了天然氧化锑（Sb${}_2$哦${}_3$) 层在 Sb 表面${}_2$硒${}_3$ 沉积过程中的薄膜和暴露在空气中，这会影响 Sb 之间的接触${}_2$硒${}_3$和后续层。在这项研究中，光电发射技术被用于 Sb${}_2$硒${}_3$ 大块晶体和薄膜来研究 Sb 之间的能带排列${}_2$硒${}_3$ 和 Sb${}_2$哦${}_3$层。通过减去原位裂解的 Sb的价带谱${}_2$硒${}_3$ 来自大气污染块状晶体的块状晶体，价带偏移（VBO）为 $-1.72$ eV 是在 Sb 之间测量的${}_2$硒${}_3$ 和锑${}_2$哦${}_3$. 这一结果得到了一个$-1.90$ 在 Sb 之间测量的 eV VBO${}_2$哦${}_3$ 和锑${}_2$硒${}_3$通过 Kraut 方法制备薄膜。这两个结果都表明跨越式排列会阻碍载流子通过顶板 PV 器件的背接触提取。这项工作更深入地了解 Sb 的带对齐${}_2$哦${}_3$ 在 Sb 表面${}_2$硒${}_3$ 薄膜，这对于提高这些光伏器件的性能至关重要。