Hydrogenation of tungsten trioxide (WO₃) can effectively modulate its material property and induce the insulator–metal transition. Due to the insertion of H atoms, a transparent WO₃ film will normally change to deep-blue color because of its pronounced electrochromism. More importantly, the electronic structure will also convert from an insulator to a metallic state, showing greatly improved conductivity with an enhancement of up to six orders of magnitude. Combined with the traditional lithography route, selective hydrogenation of WO₃ in microscale size is achieved based on the electron–proton synergistic effect in an acid solution. This metal-like conductive H-doped WO₃ can be used as an erasable microcircuit since it will be recovered to a WO₃ insulator by annealing in air at an appropriate temperature. The current study demonstrates a facile way to fabricate erasable WO₃ conducting micro/nanowires, or even microcircuits, by selective hydrogenation under ambient conditions, which should be extended to other oxide materials for functional applications.

中文翻译：

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WO3的选择性氢化用于可擦导电电路

三氧化钨（WO ₃）的氢化可以有效地调节其材料性质并诱导绝缘体-金属转变。由于H原子的插入，透明的WO ₃薄膜通常会由于其显着的电致变色而变成深蓝色。更重要的是，电子结构也将从绝缘体转变为金属状态，显示出极大改善的导电性，增强了多达六个数量级。结合传统的光刻路线，基于酸溶液中的电子-质子协同效应，实现了微米级尺寸的WO ₃选择性氢化。这种类似金属的导电 H 掺杂 WO ₃可用作可擦除微电路，因为它将通过在适当温度下在空气中退火恢复为 WO ₃绝缘体。目前的研究展示了一种通过在环境条件下选择性氢化来制造可擦除 WO ₃导电微/纳米线甚至微电路的简便方法，该方法应扩展到其他氧化物材料以用于功能应用。