V₂O₅/FTO composite films with different tungsten doping molar ratios were fabricated on soda-lime glass substrates by sol–gel spin coating method followed with annealing process. The analysis on crystallinity and surface morphology shows that W doping would induce V₂O₅ lattice distortion and make the film surface rougher. The resistance and transmittance during the phase transition process were measured to explore the electrical and optical properties of W-doped V₂O₅/FTO films. The results show that 3% W doping molar ratio is the most effective in improving the properties of V₂O₅/FTO films. The resistance of the prepared films is reduced by about three orders of magnitude from room temperature to 320℃. Compared to the undoped films, the 1%, 3% and 5% W-doped V₂O₅/FTO films possess higher conductivity and the width of the thermal hysteresis loop is narrowed from 14℃ to 13℃, 10℃ and 8℃, respectively. For undoped, 1%, 3% and 5% W-doped V₂O₅/FTO films, the phase transition temperature is 245℃, 238℃, 222℃ and 223℃, and the average transmittance decreased 7.7%, 7.8%, 11.7% and 5.7% in the range of 900–1400 nm before and after the phase transition, respectively.

采用溶胶-凝胶旋涂法和退火工艺在钠钙玻璃基板上制备了不同钨掺杂摩尔比的V ₂ O ₅ /FTO复合薄膜。结晶度和表面形貌分析表明，W掺杂会引起V ₂ O ₅晶格畸变，使薄膜表面更加粗糙。测量相变过程中的电阻和透射率以探索掺钨的 V ₂ O ₅ /FTO 薄膜的电学和光学性质。结果表明，3%的W掺杂摩尔比对提高V ₂ O ₅的性能最有效/FTO 电影。制备的薄膜的电阻从室温到320℃降低了大约三个数量级。与未掺杂薄膜相比，1%、3%和5% W掺杂的V ₂ O ₅ /FTO薄膜具有更高的电导率，热滞回线的宽度从14℃缩小到13℃、10℃和8℃ ， 分别。对于未掺杂、1%、3%和5% W掺杂的V ₂ O ₅ /FTO薄膜，相变温度分别为245℃、238℃、222℃和223℃，平均透光率分别下降7.7%、7.8%，相变前后 900-1400 nm 范围内分别为 11.7% 和 5.7%。