Since two decades ago, research on resistive memories has continuosly grown, gathering relevance through the variety of different technologies that fit into the non-volatile memories’ area. In this study, we discuss the performance and electrical characteristics of RRAM cells constituted by MIM stacks with dielectric formed by Nb₂O₅-doped SiO₂. We report experimental results that show a clear improvement in the resistive behavior of the devices and an excellent analogical control of the intermediate levels between high-resistance and low-resistance states.

中文翻译：

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用于存储和神经计算应用的 Nb ₂ O ₅掺杂 SiO ₂基 MIM 器件的性能分析

自二十年前以来，对电阻式存储器的研究不断发展，通过适合非易失性存储器领域的各种不同技术收集相关性。在这项研究中，我们讨论了由 MIM 堆叠构成的 RRAM 单元的性能和电气特性，其中电介质由 Nb ₂ O ₅掺杂的 SiO _{2 形成}。我们报告的实验结果表明，器件的电阻行为得到了明显改善，并且对高电阻和低电阻状态之间的中间电平进行了出色的类比控制。