Memristive technologies are attractive due to their nonvolatility, high density, low power, nanoscale geometry, nonlinearity, binary/multiple memory capacity, and negative differential resistance. For memristive devices, a model corresponding with practical behavioral characteristics is highly favorable for the realization of its neuromorphic system and applications. In this paper, we propose a novel memristor model based on the Ag/TiO_x nanobelt/Ti configuration, which can reflect three different states (i.e. original stage, transition stage, and resistive switching state) of the physical memristor with a satisfactory fitting precision (greater than 99.88%). Meanwhile, this work gives (1) an insight onto the electrical characteristics of the memristor model under different humidity conditions; (2) the influence of the water molecular concentration on the memristor behavior, which is of importance for the memristor fabrication and subsequent applications. For verification purposes, the proposed three-state switchable memristor is applied into the memristor-based logic implementation. The experimental results demonstrate that the constructed circuit is able to realize basic Boolean logic operations with fast response speed and high efficiency.

中文翻译：

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TSSM：基于 Ag/TiOx 纳米带/Ti 配置的三态可切换忆阻器模型

忆阻技术因其非易失性、高密度、低功耗、纳米级几何形状、非线性、二元/多存储器容量和负微分电阻而具有吸引力。对于忆阻器件而言，与实际行为特征相对应的模型非常有利于其神经形态系统的实现和应用。在本文中，我们提出了一种基于 Ag/TiO2 的新型忆阻器模型。_Xnanobelt/Ti构型，可以反映物理忆阻器的三种不同状态（即原始阶段、过渡阶段和阻变状态），拟合精度令人满意（大于99.88%）。同时，这项工作（1）深入了解忆阻器模型在不同湿度条件下的电特性；(2) 水分子浓度对忆阻器行为的影响，这对忆阻器的制造和后续应用具有重要意义。出于验证目的，将所提出的三态可切换忆阻器应用于基于忆阻器的逻辑实现中。实验结果表明，所构建的电路能够实现基本的布尔逻辑运算，响应速度快，效率高。