A novel Al-doped (3 wt%) ZnO (AZO) UV photodetector (PD) and ZnO/AZO heterojunction double-layer UV PD were prepared on a polyethylene terephthalate (PET) substrate by utilizing the radio frequency (RF) sputtering technology and conventional photolithography. Because the ZnO/AZO heterojunction possesses the ability to improve the separation of the photogenerated electron-hole pairs, the responsivity of the ZnO/AZO PD is higher than that of the pure AZO PD under the same bias voltage. Moreover, the responsivity of the obtained ZnO/AZO PD showed a 1.13 fold increase from 5.91 to 6.70 A/W when the tensile variable ɛ was 0.16. These findings also provide a new alternative for the preparation of flexible UV PDs with piezo-phototronic effect, which is low-cost and offers environmental sustainability.

利用射频 (RF) 溅射技术在聚对苯二甲酸乙二醇酯 (PET) 衬底上制备了新型 Al 掺杂 (3 wt%) ZnO (AZO) 紫外光电探测器 (PD) 和 ZnO/AZO 异质结双层紫外 PD常规光刻。由于ZnO/AZO异质结具有改善光生电子-空穴对分离的能力，在相同偏压下，ZnO/AZO PD的响应度高于纯AZO PD。此外，当拉伸变量 ɛ 为 0.16 时，所获得的 ZnO/AZO PD 的响应率从 5.91 增加到 6.70 A/W，增加了 1.13 倍。这些发现还为制备具有压电光电效应的柔性 UV PD 提供了一种新的替代方案，其成本低且具有环境可持续性。