A low p–n built-in potential (1.75 V) makes 3C-SiC an attractive choice for medium voltage bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and power device fabrication had, therefore, been hindered by issues, such as high defect density and limited processing temperature, while devices were necessarily limited to lateral structures. In this work, we present the fabrication and characterization of a vertical PiN diode using bulk 3C-SiC material. A p-type ohmic contact was obtained on Al implanted regions with a specific contact resistance ∼10⁻³ Ω cm². The fabricated PiN diode has a low forward voltage drop of 2.7 V at 1000 A/cm², and the on–off ratio at ±3 V is as high as 10⁹. An ideality factor of 1.83–1.99 was achieved, and a blocking voltage of ∼110 V was observed using a single-zone junction termination design.

中文翻译：

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独立式3C-SiC双极功率二极管的研究

低 p-n 内置电位 (1.75 V) 使 3C-SiC 成为中压双极或电荷平衡器件的有吸引力的选择。直到最近，大多数 3C-SiC 都是在 Si 上生长，因此功率器件的制造受到诸如高缺陷密度和有限的加工温度等问题的阻碍，而器件必然限于横向结构。在这项工作中，我们展示了使用体 3C-SiC 材料的垂直 PiN 二极管的制造和表征。在具有特定接触电阻～10 ^-3 Ω cm ^{2 的}Al注入区域上获得p型欧姆接触。制作的 PiN 二极管在 1000 A/cm ^{2 时}具有 2.7 V 的低正向压降，±3 V 处的开关比高达 10 ⁹. 实现了 1.83–1.99 的理想因子，并且使用单区结端接设计观察到约 110 V 的阻塞电压。