Hexagonal boron nitride (h-BN), a prevalent insulating crystal for dielectric and encapsulation layers in two-dimensional (2D) nanoelectronics and a structural material in 2D nanoelectromechanical systems, has also rapidly emerged as a promising platform for quantum photonics with the recent discovery of optically active defect centers and associated spin states. Combined with measured emission characteristics, here we propose and numerically investigate the cavity quantum electrodynamics scheme, incorporating these defect-enabled single photon emitters (SPEs) in h-BN microdisk resonators. The whispering-gallery nature of microdisks can support multiple families of cavity resonances with different radial and azimuthal mode indices simultaneously, overcoming the challenges in coinciding a single point defect with the maximum electric field of an optical mode both spatially and spectrally. The excellent characteristics of h-BN SPEs, including exceptional emission rate, considerably high Debye–Waller factor, and Fourier transform limited linewidth at room temperature, render strong coupling with the ratio of coupling to decay rates g/max(γ, κ) predicated as high as 500. This study not only provides insight into the emitter–cavity interaction, but also contributes toward realizing h-BN photonic components, such as low-threshold microcavity lasers and high-purity single photon sources, critical for linear optics quantum computing and quantum networking applications.

中文翻译：

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六方氮化硼中单光子发射器的腔量子电动力学设计

六方氮化硼 (h-BN) 是二维 (2D) 纳米电子学中用于介电层和封装层的普遍绝缘晶体，也是二维纳米机电系统中的结构材料，最近的发现也迅速成为量子光子学的有前途的平台光学活性缺陷中心和相关的自旋态。结合测量的发射特性，我们在这里提出并数值研究了腔量子电动力学方案，将这些启用缺陷的单光子发射器 (SPE) 结合到 h-BN 微盘谐振器中。微盘的回音壁特性可以同时支持具有不同径向和方位角模态指数的多个腔共振家族，克服将单点缺陷与光学模式在空间和光谱上的最大电场重合的挑战。h-BN SPE 的优异特性，包括出色的发射率、相当高的德拜-沃勒因子和傅里叶变换在室温下的有限线宽，使耦合与衰减率的比率强耦合g /max( γ , κ ) 高达 500。这项研究不仅提供了对发射器-腔相互作用的深入了解，而且有助于实现 h-BN 光子组件，如低阈值微腔激光器和高纯度单光子源，对于线性光学量子计算和量子网络应用至关重要。