The electrical degradation in AlGaN/GaN high-electron-mobility transistors (HEMTs) is examined under irradiation with 7.6-MeV carbon (C), 20-MeV oxygen (O), and 30-MeV fluorine (F) ions in situ. To characterize the radiation damage in the HEMTs, the ionizing dose DiD_{i} , displacement dose DdD_{d} , and number of vacancies versus the chip depth in the devices have been calculated for heavy ions. As expected, in all three types of HEMTs, the output current decreases more than 30% and threshold voltage positive shifts after the irradiation fluence of 4×10124\times 10^{12} ions/cm2. The performance degradation of AlGaN/GaN HEMTs is caused by radiation-induced charged defects. Based on calculation and experimental results, it is shown that the nonionizing energy loss (NIEL) method is not suitable for estimating the degradation of AlGaN/GaN HEMTs either considering gallium vacancy or considering both gallium vacancy and nitrogen vacancy. In the same displacement damage dose, the threshold voltage degradation rate depends on the type of incident particles and independent of the channel length. The damage caused by carbon ions is the smallest and the damage caused by fluoride ions is the largest.

中文翻译：

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各种重离子对 AlGaN/GaN HEMT 器件电离和位移损伤的影响


在 7.6 MeV 碳 (C)、20 MeV 氧 (O) 和 30 MeV 氟 (F) 离子原位照射下检查 AlGaN/GaN 高电子迁移率晶体管 (HEMT) 的电退化。为了表征 HEMT 中的辐射损伤，计算了重离子的电离剂量 DiD_{i} 、位移剂量 DdD_{d} 以及器件中空位数量与芯片深度的关系。正如预期的那样，在所有三种类型的 HEMT 中，在 4×10124×10^{12} ions/cm2 辐照注量后，输出电流均下降超过 30%，阈值电压正移。 AlGaN/GaN HEMT 的性能下降是由辐射引起的带电缺陷引起的。基于计算和实验结果表明，无论是考虑镓空位还是同时考虑镓空位和氮空位，非电离能量损失（NIEL）方法都不适合估计AlGaN/GaN HEMT的退化。在相同的位移损伤剂量下，阈值电压衰减率取决于入射粒子的类型并且与沟道长度无关。碳离子造成的损害最小，氟离子造成的损害最大。