The dark current and the photo response characteristics of extended wavelength In _0.83 Ga _0.17 As/InP photodetectors (PDs) with n-In _0.83 Ga _0.17 As absorber doped to ${8}\times {1}^{{15}}$ , ${7}\times {10}^{{16}}$ and ${1}\times {10}^{{17}}{\mathrm {cm}}^{{-3}}$ are investigated in an elevated temperature range of −40 to 100°C. The lightly doped PD exhibits a lower (higher) dark current than the heavily doped PD at temperatures higher (lower) than 30°C. The photocurrent, the spectral responsivity and the blackbody response voltage for the heavily doped PD rapidly decrease at temperatures higher than 30°C, while remain almost unchanged until 90°C for the lightly doped PD. The trend of the intermediately doped PD is between the two. In contrast, a consistently increasing trend of the dark noise over the whole measured temperature range are observed for three PDs. Theoretical calculations indicate such behaviors are essentially related with the temperature-dependent variation of the Shockley-Read-Hall lifetimes under different doping concentration.

中文翻译：

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1–2.5 μm 扩展波长 In₀.₈₃Ga₀.₁₇As​​ 光电探测器在 InP 衬底上的高温行为

掺有 n-In _0.83 Ga _0.17 As 吸收剂的扩展波长 In _0.83 Ga _0.17 As/InP 光电探测器 (PD) 的暗电流和光响应特性 ${8}\times {1}^{{15}}$ , ${7}\times {10}^{{16}}$ 和 ${1}\times {10}^{{17}}{\mathrm {cm}}^{{-3}}$ 在 -40 至 100°C 的高温范围内进行研究。在高于（低于）30°C 的温度下，轻掺杂 PD 表现出比重掺杂 PD 更低（更高）的暗电流。重掺杂 PD 的光电流、光谱响应率和黑体响应电压在高于 30°C 的温度下迅速下降，而轻掺杂 PD 的光电流、光谱响应率和黑体响应电压在 90°C 之前几乎保持不变。中掺杂PD的趋势介于两者之间。相比之下，对于三个 PD，在整个测量温度范围内观察到暗噪声的持续增加趋势。理论计算表明，这种行为本质上与不同掺杂浓度下肖克利-雷德-霍尔寿命随温度的变化有关。