NO_x emissions cause many negative impacts on the living environment. The photocatalysis of semiconductors is superior for nitric oxide (NO) degradation due to their low redox potential. In this report, we combine SnO_2-x/g-C₃N₄ heterojunction photocatalyst toward the high selectivity into green products under visible light illumination. Results show that SnO_2-x/g-C₃N₄ heterojunction degraded 40.8% of NO, which is 1.6 times higher than that of g-C₃N₄. In addition, the selectivity coefficient of SnO_2-x/g-C₃N₄ is higher 3 times than both pure SnO_2-x and g-C₃N₄. Furthermore, SnO_2-x/g-C₃N₄ expresses a superior stability for NO photocatalytic-degradation after five cycles. The scavenger trapping test results, and electron spin resonance (ESR) analysis also provide more understanding of the charge transfer mechanism of materials. SnO_2-x/g-C₃N₄ heterojunction shows a high removal efficiency of NO gas, making it an up-and-coming environmental treatment candidate.

NO _x排放对生活环境造成许多负面影响。由于其低氧化还原电位，半导体的光催化对于一氧化氮 (NO) 的降解具有优越性。在本报告中，我们将 SnO _2-x /gC ₃ N ₄异质结光催化剂在可见光照射下以高选择性转化为绿色产品。结果表明，SnO _2-x /gC ₃ N ₄异质结降解40.8%的NO，是gC ₃ N _{4 的}1.6倍。此外，SnO _2-x /gC ₃ N ₄的选择性系数比纯 SnO _2-x和 gC ₃ N ₄高 3 倍。此外，SnO _2-x /gC ₃ N ₄在五次循环后表现出优异的NO光催化降解稳定性。清道夫捕获测试结果和电子自旋共振 (ESR) 分析也提供了对材料电荷转移机制的更多理解。SnO _2-x /gC ₃ N ₄异质结显示出对NO气体的高去除效率，使其成为一种有前途的环境处理候选物。