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Bandgap tuning in ZnO thin films and enhanced n-type properties through Mn doping synthesized by a simple spray pyrolysis
International Journal of Modern Physics B ( IF 2.6 ) Pub Date : 2021-06-17 , DOI: 10.1142/s0217979221501551
Md. Khorshed Alam 1 , Mehnaz Sharmin 1 , Jiban Podder 1
Affiliation  

Undoped and manganese (Mn)-doped zinc oxide (ZnO) thin films have been deposited onto glass substrates at 300C using a low cost spray pyrolysis technique. Structural, optical and electrical properties of the as-deposited films have been investigated. Scanning electron microscopy images show the existence of clusters with well-defined nucleation centers consisting of highly dense ganglia-like fibers over a large area around the nucleation center. Chemical compositions of the ZnO and Mn-doped ZnO thin films are studied by using energy dispersive X-ray (EDX) analysis. X-ray diffraction spectra depict that the films have polycrystalline wurtzite structure. The average crystallite sizes are calculated in the range of 8–16 nm by Williamson–Hall method and found in good agreement with Scherer method. Optical transmittance of the films is about 80% in the visible region. Bandgap energy is tuned to 2.83 eV from 3.10 eV with increasing Mn doping. Electrical resistivity at room-temperature decreases significantly with increasing Mn doping as well as increasing temperature from 300–440 K. The activation energies in the temperature ranges 300–350 K and 350–440 K are found to be in the range of 0.25–0.16 eV and 0.35–0.59 eV, respectively. Hall Effect measurements show that the thin films have negative Hall co-efficient indicating n-type conductivity at room-temperature. Carrier concentration is found to be of the order of 1018 cm3.

中文翻译:

通过简单的喷雾热解合成的 Mn 掺杂来调节 ZnO 薄膜的带隙和增强 n 型特性

未掺杂和掺杂锰 (Mn) 的氧化锌 (ZnO) 薄膜已在 300 ℃沉积到玻璃基板上C 使用低成本的喷雾热解技术。已经研究了沉积膜的结构、光学和电学性质。扫描电子显微镜图像显示存在具有明确成核中心的簇,该簇由成核中心周围的大面积上的高密度神经节状纤维组成。使用能量色散 X 射线 (EDX) 分析研究了 ZnO 和 Mn 掺杂 ZnO 薄膜的化学成分。X射线衍射光谱表明薄膜具有多晶纤锌矿结构。通过 Williamson-Hall 方法计算的平均微晶尺寸在 8-16 nm 范围内,与 Scherer 方法非常吻合。薄膜在可见光区的透光率约为 80%。随着 Mn 掺杂的增加,带隙能量从 3.10 eV 调整到 2.83 eV。室温下的电阻率随着 Mn 掺杂的增加以及从 300-440 K 的温度升高而显着降低。在 300-350 K 和 350-440 K 的温度范围内的活化能被发现在 0.25-0.16 的范围内eV 和 0.35–0.59 eV,分别。霍尔效应测量表明薄膜具有负霍尔系数表明n型室温下的电导率。载流子浓度约为 1018厘米-3.
更新日期:2021-06-17
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