We report on a quantitative use of Kelvin probe force microscopy (KPFM) for the analysis of charge injection in thin oxides. Here, thin dielectrics are investigated through an atomic force microscopy tip that is used as a movable (virtual) top-electrode. The charge is injected and read-out respectively by alternating the direct contact of the probe with the oxide, and with non-contact surface potential imaging. The contact potential difference (CPD) between the atomic force microscope tip and the oxide surface is used to measure the charge distribution under multiple electrical stress conditions, thus correlating locally trapped charge with dielectric properties.

我们报告了定量使用开尔文探针力显微镜 (KPFM) 来分析薄氧化物中的电荷注入。在这里，通过用作可移动（虚拟）顶部电极的原子力显微镜尖端研究薄电介质。通过交替探针与氧化物的直接接触和非接触表面电位成像，分别注入和读出电荷。原子力显微镜尖端和氧化物表面之间的接触电位差 (CPD) 用于测量多种电应力条件下的电荷分布，从而将局部捕获的电荷与介电特性相关联。