A novel synthesis of tin sulfide film was used for the first time when the film was prepared directly from abundant and biodegradable precursors via a simple SILAR (successive ionic layer adsorption and reaction) method at 40 °C. The structural, optical and electrochemical properties of tin sulfides are explored by changing the number (20 or 30) of SILAR cycles and the quantity of L-ascorbic acid (0.6-1.3 g). X-ray diffraction data showed the multiphase composition consisting of SnS and Sn₂S₃ in obtained films on fluorine doped tin oxide coated glass slides and Raman spectroscopy confirmed this. The most intensive peaks are assigned to mineral herzenbergite. Scanning electron microscopy showed that the films consist of densely packed irregular clusters of nanoparticles. The crystallite size was in the range of 9 - 15 nm and was dependent on the number of SILAR deposition cycles. The average size of the thickness of films varied from 310 to 1050 nm. The bandgap values calculated using ultraviolet-visible light spectroscopy data are very close to the theoretical values of herzenbergite (0.9- 1.3 eV). Electrochemical measurements showed that among all the films tested in this study, a tin sulfide film prepared with the lowest quantity of ascorbic acid is able to generate the highest specific capacitance of 6.35 F⋅g⁻¹ with the best specific energy value of 3.53 Wh⋅kg⁻¹. These results confirmed that the samples are promising candidates to be used as supercapacitors.

当薄膜是通过简单的 SILAR（连续离子层吸附和反应）方法在 40°C 下直接从丰富且可生物降解的前体制备时，首次使用了新型硫化锡薄膜。通过改变 SILAR 循环次数（20 或 30）和 L-抗坏血酸的数量（0.6-1.3 g）来探索硫化锡的结构、光学和电化学特性。X 射线衍射数据显示由 SnS 和 Sn ₂ S ₃组成的多相组成在掺氟氧化锡涂覆的载玻片上获得的薄膜和拉曼光谱证实了这一点。最密集的峰被指定为矿物赫岑贝石。扫描电子显微镜显示薄膜由密集排列的不规则纳米颗粒簇组成。微晶尺寸在 9-15 nm 范围内，取决于 SILAR 沉积循环的次数。薄膜厚度的平均尺寸从 310 到 1050 nm 不等。使用紫外-可见光光谱数据计算的带隙值非常接近赫岑贝特的理论值 (0.9-1.3 eV)。电化学测量表明，在本研究中测试的所有薄膜中，用最低量的抗坏血酸制备的硫化锡薄膜能够产生最高的比电容 6.35 F⋅g^-1的最佳比能量值为 3.53 Wh⋅kg ^-1。这些结果证实，这些样品是用作超级电容器的有希望的候选者。