Strain engineering of graphene is a widely researched topic of the decade, one can realize the unique applications of graphene due to the strain affect. Doping in graphene is one of the methods to introduce strain and rare earths (RE) doping in graphene is a challenging task as the size of RE-atoms is much bigger compared to carbon. Herein, neodymium (Nd) is doped in graphene foam (GF) successfully, with the help of double-zone chemical vapor deposition (CVD) at hollow sites (interstitial doping). The doping is confirmed from several characterization tools and magnetotransport properties are detected afterword's. An extremely large positive magnetoresistance (PMR ∼ 1410% at 5 K under 8 T applied magnetic field) is observed in Nd-doped GF compared to as-grown GF (PMR ∼ 250% at 5 K under 8 T applied magnetic field). The PMR afterward starts decreasing upon the fabrication of Nd-composite at high temperature ∼1400 °C. Technologically, topological band structure of graphene upon doping influences the path of charge carriers as a result, a change in fermi-surface occurs, due to which unique applications can be realized.

石墨烯的应变工程是近十年来广泛研究的课题，通过应变效应可以实现石墨烯的独特应用。在石墨烯中掺杂是引入应变的方法之一，在石墨烯中掺杂稀土 (RE) 是一项具有挑战性的任务，因为与碳相比，稀土原子的尺寸要大得多。在此，借助空心部位的双区化学气相沉积 (CVD)（间隙掺杂），钕 (Nd) 成功地掺杂到石墨烯泡沫 (GF) 中。掺杂是通过几个表征工具确认的，并且在后记中检测到磁传输特性。与生长的 GF 相比，在掺 Nd 的 GF 中观察到极大的正磁阻（在 8 T 外加磁场下 5 K 时 PMR ～ 1410%）（PMR ～ 250% 在 8 T 外加磁场下 5 K 时）。之后在高温~1400°C 下制造 Nd 复合材料后，PMR 开始下降。从技术上讲，掺杂后石墨烯的拓扑能带结构会影响电荷载流子的路径，从而导致费米面发生变化，因此可以实现独特的应用。