Graphene plasmonic (GP) concentrates the electromagnetic waves in small zones beyond the optical diffraction limit. This effect provides strong interactions of radiation with atomic and molecular systems in the vicinity. Here, in this work, we use GP effect to enhance the intersubband optical response of truncated conic-shaped InAs/GaAs quantum dots (QDs) attached to wetting layer (WL). Monolayer graphene flakes with triangular geometries arranged in various configurations are located in the QDs to intensify the electric field and consequently to couple GP with terahertz radiation of QDs. The results show 120-fold enhancement in S-to-P transition dipole moment (TDM) and 1.3 × 10⁴ and 6.5 × 10⁷ times enhancements, respectively, in the linear and third-order optical susceptibility of QDs. The optimal QDs are those with height of 5 nm and base length of 10 nm. The results of this work are promising to improve the performance of QD-based lasers, detectors, light emitting diodes (LEDs), etc.

石墨烯等离子体 (GP) 将电磁波集中在超出光学衍射极限的小区域中。这种效应提供了辐射与附近原子和分子系统的强相互作用。在这里，在这项工作中，我们使用 GP 效应来增强连接到润湿层 (WL)的截锥形 InAs/GaAs 量子点(QD)的子带间光学响应。具有以各种配置排列的三角形几何形状的单层石墨烯薄片位于 QD 中以增强电场，从而将 GP 与 QD 的太赫兹辐射耦合。结果显示 S-to-P 跃迁偶极矩 (TDM) 和 1.3 × 10 ⁴和 6.5 × 10 ⁷增强了 120 倍QD 的线性和三阶光学磁化率分别增加了 10 倍。最佳量子点是高度为 5 nm 和碱基长度为 10 nm 的量子点。这项工作的结果有望提高基于 QD 的激光器、探测器、发光二极管 (LED) 等的性能。