Halide perovskite single crystals (HPSCs) provide a unique platform to study the optoelectronic properties of such emerging semiconductor materials, while the temperature induced crystal growth method often has an increased solute integration speed and/or unavoidable solute consumption, resulting in a soaring or slumping crystal growth rate of HPSCs. Here, we developed a universal and facile solvent-volatilization-limited-growth (SVG) strategy to finely control the crystal growth rate by the fine-control-valve for high quality crystal grown through solution processes. The grown HPSCs by SVG method exhibited a record low trap density of 2.8 × 10⁸ cm⁻³ and a high charge carrier mobility-lifetime product (μτ product) of 0.021 cm²/V, indicating the excellent crystal quality. The crystal surface defects were further passivated by oxygen suppliers as Lewis base, which led to a reduction of surface leakage current by two times when using for low dose rate X-ray detection. Such HPSC X-ray detector displayed a high sensitivity of 1274 µC/(Gy_air cm²) with a lowest detectable dose rate of 0.56 μGy_air/s under 120 keV hard X-ray. Further applications including alloy composition analysis and metal flaw detection by HPSC detectors were also demonstrated, which not only shows the bright future for product quality inspection and non-destructive materials analysis, but also paves the way for growing high quality single crystals and fabricating polycrystalline films.

卤化物钙钛矿单晶 (HPSC) 为研究此类新兴半导体材料的光电特性提供了独特的平台，而温度诱导晶体生长方法通常会增加溶质积分速度和/或不可避免的溶质消耗，导致晶体飙升或下滑HPSC 的生长速度。在这里，我们开发了一种通用且简便的溶剂挥发限制生长（SVG）策略，通过精细控制阀精细控制晶体生长速率，以通过溶液工艺生长高质量晶体。通过 SVG 方法生长的 HPSC 表现出创纪录的 2.8 × 10 ⁸ cm ^-3的低陷阱密度和0.021 cm ²的高电荷载流子迁移率-寿命乘积（μτ乘积）/V，说明晶体质量优良。晶体表面缺陷被供氧体进一步钝化为路易斯碱，这导致在用于低剂量率 X 射线检测时表面漏电流减少两倍。这种 HPSC X 射线检测器在 120 keV 硬 X 射线下显示出 1274 µC/(Gy _air cm ^{2 ) 的高灵敏度和 0.56 μGy} _air /s的最低可检测剂量率。还展示了HPSC探测器在合金成分分析和金属探伤等方面的进一步应用，不仅展示了产品质量检测和无损材料分析的美好前景，也为高质量单晶的生长和多晶薄膜的制备铺平了道路.