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Nanohole array structured GaN-based white LEDs with improved modulation bandwidth via plasmon resonance and non-radiative energy transfer
Photonics Research ( IF 6.6 ) Pub Date : 2021-06-14 , DOI: 10.1364/prj.421366
Rongqiao Wan 1 , Guoqiang Li 2 , Xiang Gao 1 , Zhiqiang Liu 3, 4 , Junhui Li 1 , Xiaoyan Yi 3, 4 , Nan Chi 2 , Liancheng Wang 1
Affiliation  

Commercial white LEDs (WLEDs) are generally limited in modulation bandwidth due to a slow Stokes process, long lifetime of phosphors, and the quantum-confined Stark effect. Here we report what we believe is a novel plasmonic WLED by infiltrating a nanohole LED (H-LED) with quantum dots (QDs) and Ag nanoparticles (NPs) together (M-LED). This decreased distance between quantum wells and QDs would open an extra non-radiative energy transfer channel and thus enhance Stokes transfer efficiency. The presence of Ag NPs enhances the spontaneous emission rate significantly. Compared to an H-LED filled with QDs (QD-LED), the optimized M-LED demonstrates a maximum color rendering index of 91.2, a 43% increase in optical power at 60 mA, and a lowered correlated color temperature. Simultaneously, the M-LED exhibits a data rate of 2.21 Gb/s at low current density of 96 A/cm2 (60 mA), which is 77% higher than that of a QD-LED. This is mainly due to the higher optical power and modulation bandwidth of the M-LED under the influence of plasmon, resulting in a higher data rate and higher signal-to-noise ratio under the forward error correction. We believe the approach reported in this work should contribute to a WLED light source with increased modulation bandwidth for a higher speed visible light communication application.

中文翻译:

纳米孔阵列结构的基于 GaN 的白光 LED,通过等离子体共振和非辐射能量转移提高调制带宽

由于斯托克斯过程慢、荧光粉寿命长以及量子限制的斯塔克效应,商用白光 LED (WLED) 通常在调制带宽方面受到限制。在这里,我们通过将量子点 (QD) 和银纳米粒子 (NP) 一起渗透到纳米孔 LED (H-LED) (M-LED) 来报告我们认为的新型等离子体 WLED。量子阱和量子点之间距离的减小将打开额外的非辐射能量传输通道,从而提高斯托克斯传输效率。Ag NPs 的存在显着提高了自发发射率。与填充 QD 的 H-LED (QD-LED) 相比,优化后的 M-LED 的最大显色指数为 91.2,60 mA 时的光功率增加了 43%,并且相关色温降低。同时,M-LED 的数据速率为 2。96 一种/厘米2(60 mA),比 QD-LED 高 77%。这主要是由于M-LED在等离子体的影响下具有更高的光功率和调制带宽,导致在前向纠错下具有更高的数据速率和更高的信噪比。我们相信这项工作中报告的方法应该有助于 WLED 光源,具有更高的调制带宽,用于更高速的可见光通信应用。
更新日期:2021-07-02
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