A conventional thermal evaporation technique has been used for thin film preparation of Se₄₀As_60−yS_y (y = 0, 10, 20) chalcogenide materials. Optical characterization has been done in the wavelength range of 600–2700 nm in the thin films of above mentioned materials. Various optical parameters like refractive index, extinction coefficient, dielectric constant, dielectric loss, absorption coefficient and band gap have been calculated after the analysis of transmission spectra of the given samples. On the basis of optical parameters the optical characteristics have been discussed for Se₄₀As_60−yS_y (y = 0, 10, 20) materials. Optical band gap is estimated by using Tauc’s extrapolation and is found to increase with S addition. This behavior of optical band gap is interpreted in terms of co-ordination number and chemical bond energy. The outcomes of optical characterization motivated towards to find the scope of present glassy system as optical materials.

传统的热蒸发技术已用于 Se ₄₀ As _60-y S _y (y = 0, 10, 20) 硫属化物材料的薄膜制备。在上述材料的薄膜中，在 600-2700 nm 的波长范围内进行了光学表征。在分析给定样品的透射光谱后，计算了各种光学参数，如折射率、消光系数、介电常数、介电损耗、吸收系数和带隙。在光学参数的基础上，讨论了 Se ₄₀ As _60−y S _y的光学特性(y = 0, 10, 20) 材料。光学带隙是通过使用 Tauc 的外推法估计的，并且发现随着 S 添加而增加。光学带隙的这种行为是根据配位数和化学键能来解释的。光学表征的结果促使寻找目前玻璃系统作为光学材料的范围。