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Sulfide-Fixed Intrinsic Porous NiCoP for Boosting High Capacitance and Long-Term Stability
ACS Materials Letters ( IF 9.6 ) Pub Date : 2021-06-16 , DOI: 10.1021/acsmaterialslett.1c00282 Lili Song 1 , Qingqing Wang 1 , Xiaoyun Ye 2 , Fan Yang 1 , Lian Wang 1 , Yi Wu 3 , Feng Xu 3 , Yuqiao Wang 1
ACS Materials Letters ( IF 9.6 ) Pub Date : 2021-06-16 , DOI: 10.1021/acsmaterialslett.1c00282 Lili Song 1 , Qingqing Wang 1 , Xiaoyun Ye 2 , Fan Yang 1 , Lian Wang 1 , Yi Wu 3 , Feng Xu 3 , Yuqiao Wang 1
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The electrochemical activity and stability of energy storage devices determine their practical prospects. In this work, we developed a method to form sulfide-fixed intrinsic porous NiCoP by sequential heat treatment, phosphorization, and vulcanization from Ni–Co layered double hydroxides. The intrinsic porosity is different from the pore structure constructed by traditional micronano structure because of the secondary defect structures accompanying the preparation process. The further sulfurization of the phosphide can form sulfides near the intrinsic pores. The sulfides of NiS and Co3S4 are typically enriched around the pores. These sulfides can enhance the electrochemical activity and robustness of the pores. The changes in the electronic structure and atomic packing factor were conducive to enhanced conductivity and structural stability because of the differences in electronegativity and atomic radius based on sulfur and phosphorus atoms. The charge storage mechanism was also evaluated by semiempirical equations to further verify how vulcanization increased the capacitance.
中文翻译：
用于提高高电容和长期稳定性的硫化物固定本征多孔 NiCoP
储能装置的电化学活性和稳定性决定了它们的实用前景。在这项工作中，我们开发了一种方法，通过顺序热处理、磷化和硫化，从 Ni-Co 层状双氢氧化物形成硫化物固定的本征多孔 NiCoP。固有孔隙率不同于传统微纳米结构构建的孔隙结构，这是因为制备过程中伴随着二次缺陷结构。磷化物的进一步硫化可在固有孔隙附近形成硫化物。NiS 和 Co 3 S 4的硫化物通常在毛孔周围富集。这些硫化物可以增强孔隙的电化学活性和坚固性。由于基于硫和磷原子的电负性和原子半径的差异，电子结构和原子堆积因子的变化有利于增强导电性和结构稳定性。还通过半经验方程评估了电荷存储机制，以进一步验证硫化如何增加电容。
更新日期：2021-07-05
中文翻译：
用于提高高电容和长期稳定性的硫化物固定本征多孔 NiCoP
储能装置的电化学活性和稳定性决定了它们的实用前景。在这项工作中，我们开发了一种方法，通过顺序热处理、磷化和硫化，从 Ni-Co 层状双氢氧化物形成硫化物固定的本征多孔 NiCoP。固有孔隙率不同于传统微纳米结构构建的孔隙结构，这是因为制备过程中伴随着二次缺陷结构。磷化物的进一步硫化可在固有孔隙附近形成硫化物。NiS 和 Co 3 S 4的硫化物通常在毛孔周围富集。这些硫化物可以增强孔隙的电化学活性和坚固性。由于基于硫和磷原子的电负性和原子半径的差异，电子结构和原子堆积因子的变化有利于增强导电性和结构稳定性。还通过半经验方程评估了电荷存储机制，以进一步验证硫化如何增加电容。
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