Since Hewlett Packard (HP) announced the passive fabrication of their memristors, various memristive technologies?as a promising emerging technology?have gained ever-increasing attention from the researchers. Although a natural application is using them as memory units, there have been several works in the literature showing their utilization in circuits and systems. While research on various aspects of memristive circuits and systems has been proliferating, the majority of these works are based on simulations at different levels of modeling abstraction. Simulation is a very helpful design tool, and there have been several efforts in modeling memristors; however, we contend that at this point these simulations represent the reality of the behavior of memristors, especially in a circuit or system set-up, only to a very limited extent. We show how this negatively affects the reproduction of designed circuits and systems in different simulation levels, and more importantly in a real-world set-up with physical implementation. Following that, we look into some considerations which can improve the reproducibility of the circuits and systems to be designed in the future. We conclude the paper by suggesting certain approaches to tackle these practical challenges at device level as well as circuit and system level.

中文翻译：

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从忆阻电路和系统的行为设计到物理实现

自从惠普 (HP) 宣布被动制造忆阻器以来，各种忆阻技术——作为一种有前途的新兴技术——越来越受到研究人员的关注。尽管自然的应用是将它们用作存储单元，但文献中有几项工作表明它们在电路和系统中的应用。虽然对忆阻电路和系统各个方面的研究一直在激增，但其中大部分工作都基于不同建模抽象级别的模拟。仿真是一种非常有用的设计工具，并且已经在对忆阻器建模方面做出了一些努力；然而，我们认为此时这些模拟仅在非常有限的程度上代表了忆阻器行为的现实，尤其是在电路或系统设置中。我们展示了这如何在不同的模拟级别中对设计的电路和系统的再现产生负面影响，更重要的是在具有物理实现的真实世界设置中。接下来，我们研究了一些可以提高未来设计的电路和系统的可重复性的考虑因素。我们通过建议某些方法来解决设备级别以及电路和系统级别的这些实际挑战来结束本文。