A novel model in the photo-thermoelasticity theory with microstretch properties is studied. The plasma-elastic-thermal plane waves are propagated in a linear isotropic generalized photo-thermo-microstretch elastic semiconductor solid medium. The photothermal excitation occurs in the context of the microinertia of the microelement process during two-dimensional (2D) deformation. The harmonic wave techniques are used to get the solutions for the basic variables. The analytical solution of the main physical fields; carrier intensity, normal displacement components, temperature, stress load force, microstress and tangential coupled stress can be obtained. Some graphics illustrated when using the plasma, thermal and mechanical load boundary conditions are applied at the outer free surface of the elastic medium. Some semiconductor materials, as silicon (Si) and Germanium (Ge), are used to make the numerical simulation and some comparisons in different thermal memories are made. The main physical variables with new parameters are discussed theoretically and shown graphically.

研究了具有微拉伸特性的光热弹性理论中的新模型。等离子体-弹性-热平面波在线性各向同性广义光-热-微拉伸弹性半导体固体介质中传播。光热激发发生在二维 (2D) 变形过程中微元件过程的微惯性的背景下。谐波技术用于获得基本变量的解。主要物理场解析解；可以得到载体强度、法向位移分量、温度、应力载荷力、微应力和切向耦合应力。使用等离子体、热和机械载荷边界条件时说明的一些图形应用于弹性介质的外自由表面。一些半导体材料，使用硅 (Si) 和锗 (Ge) 进行数值模拟，并在不同的热存储器中进行了一些比较。理论上讨论了具有新参数的主要物理变量并以图形方式显示。