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Investigations on SILAR coated CZTS thin films for solar cells applications
Phase Transitions ( IF 1.3 ) Pub Date : 2021-06-14 , DOI: 10.1080/01411594.2021.1939874
K. Ganesh Kumar 1, 2 , P. Balaji Bhargav 1, 2 , D. Gnana Prakash 1, 2 , R. Kaushik 1, 2 , E. Reon Mathew 1, 2 , M. K. Shriram 1, 2 , K. Veerathangam 1, 2
Affiliation  

ABSTRACT

Cu2ZnSnS4 (CZTS) is considered as a suitable absorber material for thin-film solar cell applications due to its optimum electrical and optical properties. In the present study, CZTS thin films are successfully deposited onto the glass substrates using SILAR method. Structural, morphological, optical and electrical properties of the deposited CZTS thin films are analyzed. X-ray diffraction (XRD) analysis confirms the formation of tetragonal structure of the deposited thin films. Microstructure analysis and elemental mapping are carried out using HRTEM. Functional groups present in the film are analyzed by FTIR studies. The Raman peaks present at 287, 336 cm−1 are attributed to A1 vibration mode of CZTS thin films. Band gaps values of CZTS films, calculated using Tauc’s plot, lie between 1.55 and 1.98 eV and are found to be suitable absorbing materials for solar cell applications.



中文翻译:

用于太阳能电池应用的 SILAR 涂层 CZTS 薄膜的研究

摘要

Cu 2 ZnSnS 4 (CZTS) 由于其最佳的电学和光学特性而被认为是适用于薄膜太阳能电池应用的吸收材料。在本研究中,使用 SILAR 方法成功地将 CZTS 薄膜沉积到玻璃基板上。分析了沉积的 CZTS 薄膜的结构、形态、光学和电学特性。X 射线衍射 (XRD) 分析证实了沉积薄膜的四方结构的形成。使用 HRTEM 进行微观结构分析和元素映射。薄膜中存在的官能团通过 FTIR 研究进行分析。287, 336 cm -1处的拉曼峰归因于 A 1CZTS薄膜的振动模式。使用 Tauc 曲线计算的 CZTS 薄膜的带隙值介于 1.55 和 1.98 eV 之间,并且被发现是适用于太阳能电池应用的吸收材料。

更新日期:2021-07-07
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