Transparent quantum-dot light-emitting diodes (Tr-QLEDs) with an inverted architecture has been developed. The inverted Tr-QLEDs are designed for integrating with thin-film transistors (TFTs) circuit easily. The 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile (HAT-CN) is employed as a hole injection layer (HIL) as well as a buffer layer in the inverted Tr-QLEDs. An optimized HAT-CN as dual-functional modified layer facilitates charge injection balance and meanwhile reduces the plasma damage caused by sputtering process. High performance device with a peak current efficiency (CE) and maximum external quantum efficiency (EQE) of 14.7 cd/A and 11.3% was obtained, wherein the EQE is the highest record for Tr-QLEDs. The transmittance of the Tr-QLEDs at 550 nm reached up to 78%. These Tr-QLEDs possess potential for the next-generation transparent displays applications.

中文翻译：

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具有倒置结构的高效透明量子点发光二极管

已经开发出具有倒置结构的透明量子点发光二极管 (Tr-QLED)。倒置 Tr-QLED 设计用于轻松与薄膜晶体管 (TFT) 电路集成。1,4,5,8,9,11-六氮杂三亚苯基六甲腈 (HAT-CN) 用作空穴注入层 (HIL) 以及倒置 Tr-QLED 中的缓冲层。优化的 HAT-CN 作为双功能改性层有利于电荷注入平衡，同时减少溅射过程造成的等离子体损伤。获得了峰值电流效率 (CE) 和最大外量子效率 (EQE) 为 14.7 cd/A 和 11.3% 的高性能器件，其中 EQE 是 Tr-QLED 的最高记录。Tr-QLED 在 550 nm 处的透光率高达 78%。