Thin monoclinic Ga₂O₃ films were deposited on c-plane sapphire substrates by low pressure chemical vapor deposition. The thin films were synthesized using high purity metallic gallium (Ga) and oxygen gas (O₂) as precursors. The effect of oxygen volume percentage on the growth rate of thin films was observed at two growth temperatures. Within the investigated growth window, a maximum growth rate of ∼2.9 μm/h was obtained for an oxygen volume percentage of 4.8% with a growth temperature at 800 °C. The film growth rate decreased as growth temperature increased when other growth parameters were kept the same. X-ray diffraction indicates that all films have the β-Ga₂O₃ structure with (−201) orientation, and those deposited with higher oxygen partial pressure are thicker and have improved crystalline quality. Polarized micro-Raman scattering is consistent with small grains of (−201) β-Ga₂O₃ having random in-plane orientations. The large variation of the relative intensities of overlapping emission bands contributing to the broad luminescence emission extending between 1.5 and 4.5 eV (∼825 and 275 nm) suggest that deposition conditions strongly affect different defect concentrations. Films deposited at 800 °C with a higher oxygen partial pressure yielded higher resistance, which may result from the incorporation of gallium vacancies, identified as a compensating point defect affecting the electrical conductivity of bulk monoclinic Ga₂O₃.

中文翻译：

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氧分压对蓝宝石衬底上沉积的单斜晶系Ga2O3性能的影响

通过低压化学气相沉积在c面蓝宝石衬底上沉积薄单斜Ga ₂ O ₃膜。使用高纯度金属镓 (Ga) 和氧气 (O ₂ ) 作为前体合成薄膜。在两种生长温度下观察到氧气体积百分比对薄膜生长速率的影响。内所研究的生长窗口，的~2.9一个最大生长速率 μ为4.8％在800℃的生长温度下的氧体积百分比，得到米/小时。当其他生长参数保持不变时，薄膜生长速率随着生长温度的升高而降低。X 射线衍射表明所有薄膜都含有 β-Ga ₂ O ₃具有（-201）取向的结构，以及具有较高氧分压沉积的结构更厚，并且具有改善的结晶质量。偏振微拉曼散射与具有随机面内取向的 (-201) β-Ga ₂ O ₃小晶粒一致。重叠发射带的相对强度的巨大变化有助于在 1.5 和 4.5 eV（~825 和 275 nm）之间扩展的宽发光发射表明沉积条件强烈影响不同的缺陷浓度。在 800 °C 下以更高的氧分压沉积的薄膜产生更高的电阻，这可能是由于镓空位的掺入，被确定为影响体单斜晶 Ga ₂电导率的补偿点缺陷○ ₃。