We have demonstrated a vertical UV-C LED composed of the Ga-face n-contact electrodes using the circular shape holes on mesa. In order to understand the dependence of optical performance on the mesa hole density, we varied the number of holes. As the number of holes on mesa increased, both the light output power and the external quantum efficiency of vertical chips have enhanced while preserving the operation voltage. In spite of reduced active area, the efficiency of current injection could be improved by reducing the current density per hole. The increased mesa hole density of vertical chips induces the enhanced light extraction through the sidewall of holes.

中文翻译：

---

垂直型深紫外发光二极管的性能取决于 Ga 面 n 接触孔密度

我们已经使用台面上的圆形孔展示了由 Ga 面n接触电极组成的垂直 UV-C LED 。为了了解光学性能对台面孔密度的依赖性，我们改变了孔的数量。随着台面上空穴数量的增加，垂直芯片的光输出功率和外部量子效率都得到了提高，同时保持了工作电压。尽管减少了有源面积，但可以通过降低每孔的电流密度来提高电流注入的效率。垂直芯片增加的台面孔密度导致通过孔侧壁的光提取增强。