A series of 3C–SiC films were grown on 4H–SiC substrates with different growth conditions using high-temperature chemical vapor deposition (HT-CVD). The influences of growth temperature (Tg) on the morphology, optical and material properties of films were assessed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman scattering spectroscopy (RSS). Significant effects of Tg on the film crystalline quality were observed from analyzing XRD and RSS results. XPS characterized the surface states of Si, C, O elements, and variations with Tg. The 3C–SiC Raman TO mode was found to shift to lower frequency with the increase of Tg in 1530–1580 °C. Temperature dependent Raman studies indicated the anharmonic coupling and variation of phonon lifetimes. The optimized Tg is obtained.

使用高温化学气相沉积（HT-CVD）在具有不同生长条件的 4H-SiC 衬底上生长一系列 3C-SiC 薄膜。通过X射线衍射（XRD）、X射线光电子能谱（XPS）和拉曼散射光谱（RSS）评估生长温度（Tg）对薄膜形貌、光学和材料性能的影响。通过分析XRD和RSS结果观察到Tg对薄膜结晶质量的显着影响。XPS 表征了 Si、C、O 元素的表面状态以及随 Tg 的变化。发现 3C-SiC 拉曼 TO 模式随着 Tg 在 1530-1580°C 的增加而转移到较低频率。温度相关拉曼研究表明声子寿命的非谐波耦合和变化。获得优化的Tg。